isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.1A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

文件：265.6 Kbytes Page：2 Pages

Isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching

HEXFET Power MOSFET

Benefits • Worldwide Best RDS(on) in TO-220 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power S

HEXFET짰Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Advanced Process Technology

Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified *

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Po

采用 D2-Pak 封装的 100V 单 N 通道 IR MOSFET

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes Page：12 Pages

采用 D2-Pak 封装的 100V 单 N 通道 IR MOSFET

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes Page：11 Pages

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes Page：11 Pages

Surface Mount Fuses - Thin-Film Surface Mount

文件：83.74 Kbytes Page：1 Pages

Wideband Bias Chokes

文件：198.78 Kbytes Page：2 Pages

Low Jitter 5pS

文件：133.84 Kbytes Page：2 Pages

ESTABLISHED RELIABILITY TO-5 RELAYS

文件：143.66 Kbytes Page：6 Pages

Adjustable Accurate Reference Source

文件：795.37 Kbytes Page：2 Pages