Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.8A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Dynamic dv/dt Rating

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage oisiance between pins tc me

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

Power MOSFET

Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

isc N-Channel MOSFET Transistor

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500V N-Channel MOSFET

HEXFET Power MOSFET

Power MOSFET

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isc N-Channel MOSFET Transistor

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Plastic Medium Power Silicon PNP Transistor

4.0 AMPERES POWER TRANSISTORS PNP SILICON . . . for amplifier and switching applications. Complementary types are BD437 and BD441.

POWER TRANSISTORS PNP SILICON

4.0 AMP POWER TRANSISTORS PNP SILICON This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. Features • Pb−Free Packages are Available*

HITAG proximity reader module hardware

GENERAL DESCRIPTION HITAG(1) is the name of one of the universal and powerful product lines of our 125 kHz family. The contactless proximity read and write system that works with passive transponders is suitable for various applications. Inductive coupling helps you to achieve reading ranges up t

HITAG proximity reader module hardware

GENERAL DESCRIPTION HITAG(1) is the name of one of the universal and powerful product lines of our 125 kHz family. The contactless proximity read and write system that works with passive transponders is suitable for various applications. Inductive coupling helps you to achieve reading ranges up t

High-Speed, Low-Power, Voltage Feedback Op Amp

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