N-Channel MOSFET Transistor

• DESCRITION • High Repetitive Peak Current Capability for Reliable Operation • Short fall & Rise Times For Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤21mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performanc

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等离子显示板开关 200V 分立 HEXFET Power MOSFET，采用无铅 TO-247AC 封装。

PDP SWITCH

Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications • Low QG for Fast Response • High Repetitive Peak Curren

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• FEATURES • With TO-247 packaging • Uninterruptible power supply • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Advanced Process Technology

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Advanced Process Technology

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Trench-MOSFET

Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series

General Description ROHM’s BU42xx and BU43xx series are CMOS Voltage Detector ICs with adjustable output delay. It is a high-accuracy, low current consumption Voltage Detector IC series with a built-in delay circuit. The lineup was established with two output types (Nch open drain and CMOS output

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