Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤25mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-247 封装的 100V 单 N 沟道功率 MOSFET

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：234.89 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：234.89 Kbytes Page：9 Pages

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

General Purpose Packaging Tape

文件：14.65 Kbytes Page：2 Pages

Nytye®Mounting Platforms

文件：241.29 Kbytes Page：1 Pages

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes Page：12 Pages

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件：278.19 Kbytes Page：7 Pages