Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating te

HEXFET Power MOSFET Die in Wafer Form

● 100 Tested at Probe ● Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** ● Ultra Low On-Resistance

Integrated Starter Alternator

文件：826.47 Kbytes Page：9 Pages

N-Channel MOSFET Transistor

文件：334.48 Kbytes Page：2 Pages

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)

Description This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitiv

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 90A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

Advanced Process Technology

文件：224.07 Kbytes Page：9 Pages

Advanced Process Technology

文件：224.07 Kbytes Page：9 Pages

N-Channel MOSFET Transistor

文件：335.09 Kbytes Page：2 Pages

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

Advanced Process Technology

文件：281.79 Kbytes Page：9 Pages

Advanced Process Technology

文件：281.79 Kbytes Page：9 Pages

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

文件：44.39 Kbytes Page：2 Pages