Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET® Power MOSFET

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications.

2.45GHz RF power amplifier and T/R switch

DESCRIPTION The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on–chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and co

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

TMOS FET Transistor

TMOS FET Transistor N-Channel - Enhancement

Fast Recovery Dual Diode Modules 100 Amperes/600-1200 Volts

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