P-Channel Enhancement Mode MOSFET

Description The IRFH9310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-90A RDS(ON)

-30V 单 P 通道 StrongIRFET ™功率 MOSFET，采用 PQFN 5x6 封装

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes Page：9 Pages

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes Page：9 Pages

Charge and Discharge Switch for Notebook PC Battery Application

文件：296.42 Kbytes Page：9 Pages

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes Page：9 Pages

Charge and Discharge Switch for Notebook PC Battery Application

文件：296.42 Kbytes Page：9 Pages

50 Ohm, RG58, 20 AWG

Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket.

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

Infra-Red Wavelength

文件：112.83 Kbytes Page：6 Pages