2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also fe

N?밅HANNEL ENHANCEMENT

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

HiRel MOSFETs

Single channel high reliability power MOSFETs

Surface Mount Fuses - Thin-Film Surface Mount

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Power Relay

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Power Relay 430 3 mm

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Celeron M Processor on 65 nm Process

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Supporting the Intel Celeron processor

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