3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

N-Channel MOSFET in a Hermetically sealed TO39

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. N-Channel MOSFET. VDSS = 400V ID = 3A RDS(ON) = 1Ω

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

MOSFETs and JFETs

HiRel MOSFETs

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

High Ripple and Ultra-Long Life

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Clock Oscillators

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Ultra-Long-Life, Switching Power Grade Radial High Ripple and Ultra-Long Life

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Celeron D Processor

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