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型号 功能描述 生产厂家 企业 LOGO 操作
IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

INTERSIL

IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRFF330

N-Channel MOSFET in a Hermetically sealed TO39

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. N-Channel MOSFET. VDSS = 400V ID = 3A RDS(ON) = 1Ω

SEME-LAB

IRFF330

HiRel MOSFETs

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INFINEON

英飞凌

IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

RENESAS

瑞萨

IRFF330

MOSFETs and JFETs

TTELEC

Dual Schottky Barrier Diodes

Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

ONSEMI

安森美半导体

Germanium PNP Transistor High Power Switch

Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.

NTE

3-Terminal Positive Regulator

文件:254.9 Kbytes Page:5 Pages

NSC

国半

IRFF330产品属性

  • 类型

    描述

  • 型号

    IRFF330

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 400V 3A 3-Pin TO-39

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 400V 3A 3PIN TO-39 - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    N CHANNEL MOSFET 400V 3A TO-205AF

  • 制造商

    International Rectifier

  • 功能描述

    N CHANNEL MOSFET, 400V, 3A TO-205AF

  • 制造商

    International Rectifier

  • 功能描述

    N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    3A; Drain Source Voltage

  • Vds

    400V; On Resistance

  • Rds(on)

    1ohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V; No. of

  • Pins

    3 ;RoHS

  • Compliant

    No

更新时间:2026-7-31 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
CAN3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
HARRIS
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
IR
2450+
CN3
6540
只做原装正品现货!或订货假一赔十!
IR
22+
CAN3
20000
公司只做原装 品质保障
HARRIS
专业铁帽
CAN3
2800
原装铁帽专营,代理渠道量大可订货
INTERSIL
24+
CAN
1000
ir
26+
N/A
6980
原装现货,可开13%税票
HAR
26+
金封
890000
一级总代理商原厂原装大批量现货 一站式服务
ir
2023+
原厂封装
50000
原装现货
IR
23+
CAN3
8560
受权代理!全新原装现货特价热卖!

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