2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state

2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

SCREW TYPE SERIES

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Rectifier Diode

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Celeron D Processor

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TACT SWITCHES

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Clock Oscillators

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