1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

N-Channel MOSFET in a Hermetically sealed TO39

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1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Power MOSFET field effect power transistor. Drain-source voltage 400 V.

MOSFETs and JFETs

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Unifor

POWER RECTIFIERS(3.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECIFITERS 3.0 AMPERES 500 -- 1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

Voltage Follower

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Voltage Follower

文件：348.91 Kbytes Page：16 Pages