1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Power MOSFET field effect power transistor. Drain-source voltage 400 V.

MOSFETs and JFETs

N-Channel MOSFET in a Hermetically sealed TO39

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Ultra Low Bias Current Varactor Bridge Operational Amplifiers

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Four wire Kelvin lead measurements

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Ultra Low Bias Current Varactor Bridge Operational Amplifiers

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SCREW TYPE SERIES

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INTERCONNECTS .100??Grid (.018??dia.) Pins SMT Gull Wing Headers & Sockets Single and Double Row

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