IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching D

3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors Features • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority carrier device

N-Channel MOSFET in a Hermetically sealed TO39

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3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.

MOSFETs and JFETs

POWER RECTIFIERS(1.0A,500-1000V)

POWER RECTIFIERS(1.0A,500-1000V)

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS