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IRFD9210价格
参考价格：￥1.6826
型号：IRFD9210PBF 品牌：VISHAY 备注：这里有IRFD9210多少钱，2026年最近7天走势，今日出价，今日竞价，IRFD9210批发/采购报价，IRFD9210行情走势销售排行榜，IRFD9210报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFD9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFD9210 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • D | IRF | | |
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) | INFINEON 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • D | IRF | | ||
Power MOSFET 文件：797.73 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Geode??CS9210 Graphics Companion DSTN Controller 文件：776.17 Kbytes Page：39 Pages | NSC 国半 | | ||
Geode??CS9210 Graphics Companion DSTN Controller 文件：776.17 Kbytes Page：39 Pages | NSC 国半 | | ||
3.3/4 DIGIT SINGLE CHIP DIGITAL MULTIMETER LSI??? 文件：833.94 Kbytes Page：22 Pages | NJRC 日本无线 | | ||
3.3/4 DIGIT SINGLE CHIP DIGITAL MULTIMETER LSI???? 文件：830.24 Kbytes Page：22 Pages | NJRC 日本无线 | | ||
3.3/4 DIGIT SINGLE CHIP DIGITAL MULTIMETER LSI???? 文件：830.24 Kbytes Page：22 Pages | NJRC 日本无线 | |
IRFD9210产品属性
- 类型
描述
- 型号
IRFD9210
- 功能描述
MOSFET P-Chan 200V 0.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DIP4 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VIS |
25+ |
66880 |
原装正品，欢迎询价 |
||||
IR |
26+ |
PLCC44 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
IR |
25+ |
NA |
14155 |
专做原装正品,假一罚百! |
|||
VISHAY |
24+ |
DIP4 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
IR-VISHAY |
25+ |
DIP4 |
19368 |
全新原装正品支持含税 |
|||
VISHAY |
23+ |
DIP-4 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VISHAY |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
IR |
22+ |
DIP4 |
8000 |
原装正品支持实单 |
IRFD9210芯片相关品牌
IRFD9210规格书下载地址
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DdatasheetPDF页码索引
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