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IRFD9210价格
参考价格：￥1.6826
型号：IRFD9210PBF 品牌：VISHAY 备注：这里有IRFD9210多少钱，2026年最近7天走势，今日出价，今日竞价，IRFD9210批发/采购报价，IRFD9210行情走势销售排行榜，IRFD9210报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • D | IRF |   | |
IRFD9210 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFD9210 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFD9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) | INFINEON 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technolo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • D | IRF | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：797.73 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm | ETC 知名厂家 | ETC | | |
Drive Fasteners 文件：93.97 Kbytes Page：1 Pages | HEYCO | | ||
ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES 文件：173.83 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IRFD9210产品属性
- 类型
描述
- 型号
IRFD9210
- 功能描述
MOSFET P-Chan 200V 0.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
DIP4 |
8000 |
原装正品支持实单 |
|||
IOR |
24+ |
DIP-4P |
80 |
||||
VISHAY/IR |
16+ |
DIP4 |
1326 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
VISHAY |
24+ |
DIP4 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
IR-VISHAY |
25+ |
DIP4 |
19368 |
全新原装正品支持含税 |
|||
IR |
24+ |
DIP4 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY(威世) |
2447 |
HVMDIP-4 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IR |
23+ |
DIP-4 |
7000 |
||||
VISHAY |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
IRFD9210规格书下载地址
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DdatasheetPDF页码索引
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