0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

Description This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A )

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Celeron D Processor

文件：1.75778 Mbytes Page：82 Pages

TACT SWITCHES

文件：327.77 Kbytes Page：3 Pages

Clock Oscillators

文件：143.97 Kbytes Page：3 Pages

SCREW TYPE SERIES

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Rectifier Diode

文件：370.14 Kbytes Page：3 Pages