0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

Description This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A )

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages

3-Terminal Negative Regulators

文件：210.19 Kbytes Page：8 Pages

Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages