HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A )

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

COPS Family Users Guide Table of Contents

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Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages

3-Terminal Negative Regulators

文件：210.19 Kbytes Page：8 Pages

Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages