Power MOSFET

VDS (V) 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)

VDSS = 250V RDS(on) = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

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MOSFET N-Chan 250V 0.63 Amp

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Axial Lead and Cartridge Fuses - Subminiature Glass Body

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Mini 7/8 Male Internal Threads 5 Pin Field Attachable

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SMK FEMALE TO SMK FEMALE STRAIGHT ADAPTER

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Guard ring for enhanced ruggedness and long term reliability

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