位置：首页 > IC中文资料第10829页 > IRFBL10N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFET Power MOSFET 文件：117.13 Kbytes Page：8 Pages | IRF |   | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：330.13 Kbytes Page：8 Pages | UTC 友顺 | |
IRFBL10N60产品属性
- 类型
描述
- 型号
IRFBL10N60
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
INTERNATIONA |
05+ |
原厂原装 |
13467 |
只做全新原装真实现货供应 |
|||
IR |
24+ |
65230 |
|||||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
NA/ |
6280 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
IRFBL10N60芯片相关品牌
IRFBL10N60规格书下载地址
IRFBL10N60参数引脚图相关
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2019-5-5
DdatasheetPDF页码索引
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