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IRFBF20价格
参考价格：￥7.1528
型号：IRFBF20LPBF 品牌：Vishay 备注：这里有IRFBF20多少钱，2026年最近7天走势，今日出价，今日竞价，IRFBF20批发/采购报价，IRFBF20行情走势销售排行榜，IRFBF20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBF20 | Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitve Avalanche Rated • Fast Switching • Ease of Paralleling | IRF |   | |
IRFBF20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBF20 | Power MOSFET 文件：264.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBF20 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBF20 | Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) | INFINEON 英飞凌 | | |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount (IRFBF20S) • Low-profile through-hole (IRFBF20L) • Available in Tape & Ree | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount (IRFBF20S) • Low-profile through-hole (IRFBF20L) • Available in Tape & Ree | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：264.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：373.95 Kbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：312.93 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET 文件：248.17 Kbytes Page：8 Pages | IRF | | ||
Power MOSFET 文件：264.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：264.07 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：373.95 Kbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：312.93 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：312.93 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：312.93 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFBF20产品属性
- 类型
描述
- 型号
IRFBF20
- 功能描述
MOSFET N-Chan 900V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INTERNATIONA |
05+ |
原厂原装 |
8766 |
只做全新原装真实现货供应 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY/威世 |
2450+ |
TO-262 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
VISHAY/威世 |
2022+ |
D2-PAK(TO-263) |
8000 |
只做原装支持实单,有单必成。 |
|||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
VISHAY |
25+ |
T0-220 |
9000 |
原厂原装,价格优势 |
|||
IR |
26+ |
TO-262 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY |
25+23+ |
TO-262 |
28750 |
绝对原装正品全新进口深圳现货 |
IRFBF20芯片相关品牌
IRFBF20规格书下载地址
IRFBF20参数引脚图相关
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- IRFAC40
- IRFAC30
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DdatasheetPDF页码索引
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