IRFBF20价格

参考价格:¥7.1528

型号:IRFBF20LPBF 品牌:Vishay 备注:这里有IRFBF20多少钱,2025年最近7天走势,今日出价,今日竞价,IRFBF20批发/采购报价,IRFBF20行情走势销售排行榜,IRFBF20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBF20

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitve Avalanche Rated • Fast Switching • Ease of Paralleling

IRF

IRFBF20

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

IRFBF20

Power MOSFET

文件:264.07 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFBF20

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFBF20

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Infineon

英飞凌

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount (IRFBF20S) • Low-profile through-hole (IRFBF20L) • Available in Tape & Ree

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount (IRFBF20S) • Low-profile through-hole (IRFBF20L) • Available in Tape & Ree

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount (IRFBF20S, SiHFBF20S) • Low-profile through-hole (IRFBF20L, SiHFBF20L) • Available in tape and reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of co

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:264.07 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件:373.95 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:312.93 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

文件:248.17 Kbytes Page:8 Pages

IRF

Power MOSFET

文件:264.07 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:264.07 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件:373.95 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:312.93 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:312.93 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:312.93 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFBF20产品属性

  • 类型

    描述

  • 型号

    IRFBF20

  • 功能描述

    MOSFET N-Chan 900V 1.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
128
优势代理渠道,原装正品,可全系列订货开增值税票
IR/VISHAY
22+
TO-220
100000
代理渠道/只做原装/可含税
VISHAY/威世
2450+
TO-262
9850
只做原装正品现货或订货假一赔十!
IR
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
25+
NA
880000
明嘉莱只做原装正品现货
IR
NEW
TO-220
9896
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-220AB
8866
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
VISHAY(威世)
24+
TO-263-3
7828
支持大陆交货,美金交易。原装现货库存。
IR
06+
TO-220
6000
全新原装 绝对有货

IRFBF20数据表相关新闻