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型号 功能描述 生产厂家 企业 LOGO 操作
IRF9631

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SAMSUNG

三星

IRF9631

150 V, P-channel power MOSFET

SAMSUNG

三星

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

AD

亚德诺

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

AD

亚德诺

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

AD

亚德诺

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

AD

亚德诺

更新时间:2026-5-18 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
8000
只做原装现货
IR
23+
TO-263
7000
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
IR
23+24
TO-263
59630
主营原装MOS,二三级管,肖特基,功率场效应管
IR
22+
TO-220
88345

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