P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

文件：280.48 Kbytes Page：2 Pages

RS232, #24-20c, SR-PVC, O/A Foil, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

RS232, #24-20c, FRNC/LSZH, O/A Foil, FRNC/LSZH Jkt, Cca

Product Description Computer EIA RS-232 Cable, 24 AWG stranded (7x32) tinned copper conductors, FRNC insulation, overall Beldfoil® shield (100 coverage), 24 AWG stranded tinned copper drain wire, FRNC jacket.

36 way Centronics Cables

文件：89.97 Kbytes Page：1 Pages

Ball valve

文件：82.18 Kbytes Page：2 Pages

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages