P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-CHANNEL POWER MOSFETS

FEATURES Low RDS(on) PACKAGE STYLE Package Type Part Number Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Extended safe operating area Improved high temperature reliability

isc N-Channel MOSFET Transistor

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LI LON BATTERY PROTECTOR

文件：194.92 Kbytes Page：8 Pages

LI LON BATTERY PROTECTOR

文件：194.92 Kbytes Page：8 Pages

LI LON BATTERY PROTECTOR

文件：194.92 Kbytes Page：8 Pages

LI LON BATTERY PROTECTOR

文件：194.92 Kbytes Page：8 Pages