采用无铅 SO-8 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n  \n  \n \n ;

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 10 A RDS(ON)

采用 SO-8 封装的 80V N 沟道 StrongIRFET ™功率 MOSFET

\n优势:\n•符合 RoHS\n ;

60V 单个 N 通道 HEXFET Power MOSFET, 采用无铅 SO-8 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Logic level : Optimized for 10V gate-drive voltage (called Normal level), and capable of being driven at 4.5V gate-drive voltage\n• Industry standard surface-mount package\;

Secondary Side Synchronous Rectification Switch for 15Vout

文件：214.32 Kbytes Page：8 Pages

HEXFET Power MOSFET

文件：208.86 Kbytes Page：8 Pages

Primary Side Switch in Bridge Topology

文件：214.32 Kbytes Page：8 Pages

Secondary Side Synchronous Rectification Switch for 15Vout

文件：214.32 Kbytes Page：8 Pages

Primary Side Switch in Bridge Topology

文件：214.32 Kbytes Page：8 Pages

Secondary Side Synchronous Rectification Switch for 15Vout

文件：214.32 Kbytes Page：8 Pages

Primary Side Switch in Bridge or two switch forward topologies using 48V ETSI range inputs

文件：231.71 Kbytes Page：8 Pages

Secondary Side Synchronous Rectification Switch for 12Vout

文件：231.71 Kbytes Page：8 Pages

HEXFET Power MOSFET

文件：226.24 Kbytes Page：8 Pages

Secondary Side Synchronous Rectification Switch for 12Vout

文件：231.71 Kbytes Page：8 Pages

Primary Side Switch in Bridge or two switch forward topologies using 48V ETSI range inputs

文件：231.71 Kbytes Page：8 Pages

N-Channel MOSFET

文件：2.34856 Mbytes Page：6 Pages

N-Channel MOSFET

文件：2.41051 Mbytes Page：6 Pages

HEXFETPower MOSFET

文件：232.86 Kbytes Page：8 Pages

Primary Side Switch in Bridge Topology in Isolated DC-DC Converters

文件：618.7 Kbytes Page：8 Pages

Primary Side Switch in Bridge Topology in Isolated DC-DC Converters

文件：618.7 Kbytes Page：8 Pages

Primary Side Switch in Bridge Topology in Isolated DC-DC Converters

文件：618.7 Kbytes Page：8 Pages

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent r

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent r

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold meta

Phase Control IC

Phase Control IC Pb-free lead plating; RoHS compliant This phase control IC is intended to control thyristors, triacs, and transistors. The trigger pulses can be shifted within a phase angle between 0 ˚ and 180 ˚. Typical applications include converter circuits, AC controllers and three-phase cu

Phase Control IC

Phase Control IC Pb-free lead plating; RoHS compliant This phase control IC is intended to control thyristors, triacs, and transistors. The trigger pulses can be shifted within a phase angle between 0 ˚ and 180 ˚. Typical applications include converter circuits, AC controllers and three-phase