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IRF760价格
参考价格：￥1.4771
型号：IRF7601PBF 品牌：IR 备注：这里有IRF760多少钱，2025年最近7天走势，今日出价，今日竞价，IRF760批发/采购报价，IRF760行情走势销售排行榜，IRF760报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | ||
Generation V Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Generation V Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09廓 ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi | IRF | | ||
HEXFET Power MOSFET Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi | IRF | | ||
Trench Technology Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：214.35 Kbytes Page：8 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：214.35 Kbytes Page：8 Pages | IRF | | ||
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm) | Infineon 英飞凌 | | ||
采用 Micro 8 封装的 -30V 单 P 通道功率 MOSFET | Infineon 英飞凌 | | ||
Generation V Technology 文件：189 Kbytes Page：7 Pages | IRF | | ||
Generation V Technology 文件：189 Kbytes Page：7 Pages | IRF | | ||
采用 Micro 8 封装的 20V 单 N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
Ultra Low On-Resistance 文件：149.67 Kbytes Page：8 Pages | IRF | | ||
Ultra Low On-Resistance 文件：149.67 Kbytes Page：8 Pages | IRF | | ||
STATIC SEALS DESCRIPTION The BECA 760 is a symmetrical dynamic and static facial effect U-seal, made from PTFE (different filling options) with lips that are pre-stressed by a spring. Derived from the BECA 760 profile, the BECA 769 profile is made specially for food industry applications. The V-spring | FRANCEJOINT | | ||
SIMPLE ECONOMIC ELECTRONIC METER CONTROL 文件：256.1 Kbytes Page：2 Pages | PENTAIR 滨特尔 | | ||
Premium Male/Male Jumper Wires - 40 x 12 (300mm) 文件：220.52 Kbytes Page：2 Pages | Adafruit | | ||
WIRE & CABLE TERMINATION 文件：3.92843 Mbytes Page：50 Pages | GREENLEE | | ||
MINIA TURE LOCKING POWER PLUGS 文件：65.56 Kbytes Page：1 Pages | SWITCH | |
IRF760产品属性
- 类型
描述
- 型号
IRF760
- 制造商
International Rectifier
- 功能描述
MOSFET N MICRO-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
08+ |
TSSOP-8 |
1592 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+ |
MSOP8 |
32360 |
IR全新特价IRF7606TR即刻询购立享优惠#长期有货 |
|||
IR |
2450+ |
TSSOP-8 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
25+ |
PLCC-32 |
18000 |
原厂直接发货进口原装 |
|||
IR |
25+ |
MSOP-8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
IR(国际整流器) |
24+ |
N/A |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IOR |
25+23+ |
TSSOP8 |
31677 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
SO-8 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
MSOP8 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IRF |
NEW |
MSOP-8P |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRF760芯片相关品牌
IRF760规格书下载地址
IRF760参数引脚图相关
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- isd1420
- IRF7769L2TRPBF
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- IRF7606TRPBF-CUTTAPE
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- IRF7601TRPBF
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- IRF7601
- IRF7580MTRPBF
- IRF7555
- IRF7530TRPBF-CUTTAPE
- IRF7530TRPBF
- IRF7530
- IRF7526D1TRPBF
- IRF7524D1TRPBF
- IRF7521D1TRPBF
- IRF750A
- IRF7509TRPBF-CUTTAPE
- IRF7509TRPBF
- IRF7509
- IRF7507TRPBF-CUTTAPE
- IRF7507TRPBF
- IRF7507
- IRF7506TRPBF-CUTTAPE
- IRF7506TRPBF
- IRF7506
- IRF7504TRPBF-CUTTAPE
- IRF7504TRPBF
- IRF7504
- IRF7503TRPBF-CUTTAPE
- IRF7503TRPBF/BKN
- IRF7503TRPBF
- IRF7503PBF
- IRF7503
- IRF7501TRPBF
- IRF7501
- IRF7495TRPBF
- IRF7495
- IRF7494
- IRF7493
- IRF7492
- IRF7491
- IRF7490
- IRF7488
- IRF7484
- IRF7478
- IRF7477
- IRF7476
IRF760数据表相关新闻
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2020-7-16IRF7416TRPBF，INFINEON全新原装现货
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2019-7-17
DdatasheetPDF页码索引
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