Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

20V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装

HEXFET Power MOSFET

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Ultra Low On-Resistance

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Trench Technology

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Ultra Low On-Resistance

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Trench Technology

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Trench Technology

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LDO high voltage regulator

75xx series is a low-power high-voltage regulator manufactured by CMOS process. The maximum input voltage is 30V and the output voltage range is 1.5V~12.0V.It has the characteristics of high precision output voltage, very low power supply current and very low drop voltage. ● Low power consumption

Power supply equipment such as batteries

Low power consumption: ≤3μA Low drop voltage: typical value 0.1V Low temperature drift: typical value 50 ppm/℃ High input voltage: up to 30V Highly accurate output voltage: tolerance +3 Package form: TO-92, SOT89-3, SOT-23-3, SOT23-5

DC-DC CONVERTER BOOST(STEP-UP) 0.8V STARTUP, 200mA 350KHz PFM CONTROL ASYNCHRONOUS

DESCRIPTION A7530 is PVM Step-Up DC/DC IC with ultra low supply current by CMOS process and suitable for use with battery-powered instruments. The A7530 IC consists of an oscillator, a PFM control circuit, a driver transistor (LX switch), a reference voltage unit, an error amplifier, resistors f

Low Power LDO

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Specialty Female Connectors

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