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型号 功能描述 生产厂家 企业 LOGO 操作
IRF7492

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

IRF

IRF7492

HEXFET® Power MOSFET

• Low Gate to Drain Charge to Reduce Switching Losses\r\n• Fully Characterized Avalanche Voltage and Current;

INFINEON

英飞凌

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

IRF

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

IRF

Evaluation Board for 12-bit high speed, low power, successive-approximation ADC

GENERAL DESCRIPTION The AD7492, AD7492-4, and AD7492-5 are 12-bit high speed, low power, successive approximation ADCs. The parts operate from a single 2.7 V to 5.25 V power supply and feature throughput rates up to 1.25 MSPS. They contain a low noise, wide bandwidth track/hold amplifier that can

AD

亚德诺

Evaluation Board for 12-bit high speed, low power, successive-approximation ADC

GENERAL DESCRIPTION The AD7492, AD7492-4, and AD7492-5 are 12-bit high speed, low power, successive approximation ADCs. The parts operate from a single 2.7 V to 5.25 V power supply and feature throughput rates up to 1.25 MSPS. They contain a low noise, wide bandwidth track/hold amplifier that can

AD

亚德诺

Evaluation Board for 12-bit high speed, low power, successive-approximation ADC

GENERAL DESCRIPTION The AD7492, AD7492-4, and AD7492-5 are 12-bit high speed, low power, successive approximation ADCs. The parts operate from a single 2.7 V to 5.25 V power supply and feature throughput rates up to 1.25 MSPS. They contain a low noise, wide bandwidth track/hold amplifier that can

AD

亚德诺

DECADE, DIVIDE-BY-TWELVE AND BINARY COUNTERS

文件:414.2 Kbytes Page:14 Pages

TI

德州仪器

IRF7492产品属性

  • 类型

    描述

  • 型号

    IRF7492

  • 功能描述

    MOSFET N-CH 200V 3.7A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-19 16:21:00
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