Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

HEXFET POWER MOSFET

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

Integrated Circuit RF/IF Amp

Description: The NTE744 is a monolithic silicon integrated circuit that provides an rf amplifier, if amplifier, mixer, oscillator, AGC detector, and voltage regulator on a single chip. It is intended for use in super–heterodyne AM radio receiver applications particularly in automobiles. The NTE