Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● 20 A Peak Collector Current ● Customer-Specified Selections Available

Integrated Circuit RF/IF Amp

Description: The NTE744 is a monolithic silicon integrated circuit that provides an rf amplifier, if amplifier, mixer, oscillator, AGC detector, and voltage regulator on a single chip. It is intended for use in super–heterodyne AM radio receiver applications particularly in automobiles. The NTE