HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

GENERATION V TECHNOLOGY

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GENERATION V TECHNOLOGY

文件：242.74 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：234.12 Kbytes Page：9 Pages

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：234.12 Kbytes Page：9 Pages

MachFlex™, 171G C #18 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 17+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85%) Shield, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

10-Bit Digital Temperature Sensor (AD7416) and Single/Four-Channel ADC (AD7417/AD7418)

GENERAL DESCRIPTION The AD7417 and AD7418 are 10-bit, 4-channel and single-channel ADCs with an on-chip temperature sensor that can operate from a single 2.7 V to 5.5 V power supply. The devices contain a 15 μs successive approximation converter, a 5-channel multiplexer, a temperature sensor, a c

10-Bit Digital Temperature Sensor (AD7416) and Single/Four-Channel ADC (AD7417/AD7418)

GENERAL DESCRIPTION The AD7417 and AD7418 are 10-bit, 4-channel and single-channel ADCs with an on-chip temperature sensor that can operate from a single 2.7 V to 5.5 V power supply. The devices contain a 15 μs successive approximation converter, a 5-channel multiplexer, a temperature sensor, a c

HEX INVERTER BUFFERS/DRIVERS

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Common Mode Inductors/EMI Filters

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