Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET

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HEXFET Power MOSFET

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10A,400V Heatsink N-Channel Type Power MOSFET

文件：914.96 Kbytes Page：6 Pages

HEXFET POWER MOSFET

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Power MOSFET

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740/741 High Displacement Threaded Diaphragm Seal

FEATURES „ Large diaphragm provides ample displacement for inches of water ranges „ Ideal for high static, low differential pressure applications

GROMMETS , BUSHINGS

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Wiha Quality Tools Slotted Bits

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CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO

文件：702.85 Kbytes Page：2 Pages

10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes Page：12 Pages