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IRF740AS价格
参考价格：￥4.5094
型号：IRF740ASPBF 品牌：Vishay 备注：这里有IRF740AS多少钱，2025年最近7天走势，今日出价，今日竞价，IRF740AS批发/采购报价，IRF740AS行情走势销售排行榜，IRF740AS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF740AS | Switch Mode Power Supply (SMPS) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr | IRF |   | |
IRF740AS | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRF740AS | Power MOSFET FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Power MOSFET FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converte | ISC 无锡固电 | | ||
SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and C | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
740/741 High Displacement Threaded Diaphragm Seal FEATURES Large diaphragm provides ample displacement for inches of water ranges Ideal for high static, low differential pressure applications | ASHCROFT 雅斯科 | | ||
GROMMETS , BUSHINGS 文件：362.45 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Wiha Quality Tools Slotted Bits 文件：303.45 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO 文件：702.85 Kbytes Page：2 Pages | PENTAIR 滨特尔 | | ||
10A 400V N-channel Enhancement Mode Power MOSFET 文件：1.67134 Mbytes Page：12 Pages | WXDH 东海半导体 | |
IRF740AS产品属性
- 类型
描述
- 型号
IRF740AS
- 功能描述
MOSFET N-Chan 400V 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
24+ |
TO263 |
10500 |
保证进口原装现货假一赔十 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Vishay(威世) |
24+ |
标准封装 |
7848 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
IR |
25+ |
TO-263 |
12588 |
原装正品,自己库存 假一罚十 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
TO-263 |
6727280 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY/威世 |
22+ |
TO263 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
IRF740AS芯片相关品牌
IRF740AS规格书下载地址
IRF740AS参数引脚图相关
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IRF740AS数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-7
DdatasheetPDF页码索引
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