N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

isc N-Channel MOSFET Transistor

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丝印代码：IRF7324；Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

丝印代码：IRF7324；Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

丝印代码：IRF7328；Dual P-Channel 30 V (D-S) MOSFET

Trench Technology

Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free Features

丝印代码：IRF7328；Dual P-Channel 30 V (D-S) MOSFET

Trench Technology

Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free Features

丝印代码：IRF7328；Dual P-Channel 30 V (D-S) MOSFET

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

采用 SO-8 封装的 IR MOSFET -20V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 纤薄外形（小于1.1毫米）\n• 双 P 通道 MOSFET;

HEXFET짰 Power MOSFET

Description New trench HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wit

FETKY MOSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

FETKY?줞OSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

FETKY MOSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

HEXFET Power MOSFET(-20V, 0.018ohm)

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

HEXFET Power MOSFET

Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

HEXFET Power MOSFET

Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer

Dual P-Channel 30 V (D-S) MOSFET

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

HEXFET짰 Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

HEXFET POWER MOSFET

HEXFET Power MOSFET • Trench Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Low Profile (

FETKY MOSFET & Schottky Diode

文件：154.47 Kbytes Page：8 Pages

FETKY MOSFET & Schottky Diode

文件：208.87 Kbytes Page：8 Pages

Ideal For Buck Regulator Applications

文件：214.46 Kbytes Page：8 Pages

Ideal For Buck Regulator Applications

文件：214.46 Kbytes Page：8 Pages

Dual P-Channel 30-V (D-S) MOSFET

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MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )

MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )

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FETKY MOSFET / Schottky Diode

文件：188.85 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：169.87 Kbytes Page：8 Pages

Trench Technology

文件：169.87 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：169.87 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

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Industry-standard pinout SO-8 Package

文件：191.35 Kbytes Page：8 Pages

Trench Technology

文件：169.87 Kbytes Page：8 Pages

Dual P-Channel 20V (D-S) MOSFET

文件：2.12445 Mbytes Page：8 Pages

FETKY MOSFET / Schottky Diode

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Schottky Diode

文件：339.67 Kbytes Page：8 Pages

Trench Technology

文件：175.47 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

Trench Technology Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

Trench Technology

文件：175.47 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：179.21 Kbytes Page：9 Pages

Trench Technology

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HEXFET Power MOSFET

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Ultra Low On-Resistance

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Trench Technology

文件：179.21 Kbytes Page：9 Pages

16-/32- Channel, 3.5 ??1.8 V to 5.5 V, 짹2.5 V, Analog Multiplexers

GENERAL DESCRIPTION The ADG726/ADG732 are monolithic CMOS 32-channel/dual 16-channel analog multiplexers. The ADG732 switches one of 32 inputs (S1-S32) to a common output, D, as determined by the 5-bit binary address lines A0, A1, A2, A3, and A4. The ADG726 switches one of 16 inputs as determin

15 V Single Output MOS Chopper Regulator

Overview The STK732C is a chopper type step-down dedicated 15 V single output regulator that uses a power MOSFET as its switching element. The STK732C covers the 2 A and higher current regions, regions that are difficult to handle with three terminal step-down regulators. As compared with earli

15 V Single Output MOS Chopper Regulator

Overview The STK732C is a chopper type step-down dedicated 15 V single output regulator that uses a power MOSFET as its switching element. The STK732C covers the 2 A and higher current regions, regions that are difficult to handle with three terminal step-down regulators. As compared with earli

LOW DROPOUT REGULATOR

DESCRIPTION The TK732xx is a controller IC for a low dropout voltage regulator. The TK732xx and the external PNP power transistor provide standard output voltages from 2 to 11 V and output current from 100 mA to 5 A. By utilizing an external PNP power transistor, low dropout voltage at high curre

OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY

1. Office Machine 2. Household Use Equipment 3. Solid State Relay 4. Switching Power Supply The TOSHIBA TLP731and TLP732 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP732 is no−base internal conne