400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Low Area Specific On-Resistance

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry

D Series Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=5.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω (Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power s

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

D Series Power MOSFET

·Optimal Design\n·Low Area Specific On-Resistance\n·Low Input Capacitance (Ciss);

D Series Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec