N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns / 534: 10 Turns / 535: 5 Turns

FEATURES • Bushing and servo mount designs available • Linearity ± 0.25 , down to 0.05 on request • Special resistance tolerances to 1 • Rear shaft extensions and support bearing • Metric shaft available • Dual gang configuration and concentric shafts • High torque, center tap, slipping c

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7/8 (22.2 mm) Multiturn Wirewound 533: 3 Turns/534: 10 Turns/535: 5 Turns

文件：100.25 Kbytes Page：4 Pages

(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns/534: 10 Turns/535: 5 Turns

文件：85.23 Kbytes Page：4 Pages

533 series

文件：255.7 Kbytes Page：4 Pages