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IRF533

N-Channel Power MOSFETs Avalanche Energy Rated

HARRIS

IRF533

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MOTOROLA

摩托罗拉

IRF533

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

FAIRCHILD

仙童半导体

IRF533

N-CHANNEL POWER MOSFETS

SAMSUNG

三星

IRF533

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

STMICROELECTRONICS

意法半导体

IRF533

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件:187.75 Kbytes Page:3 Pages

STMICROELECTRONICS

意法半导体

IRF533

Trans MOSFET N-CH 80V 12A 3-Pin(3+Tab) TO-220

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF533

isc N-Channel Mosfet Transistor

文件:45.27 Kbytes Page:2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFETs Avalanche Energy Rated

HARRIS

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件:187.75 Kbytes Page:3 Pages

STMICROELECTRONICS

意法半导体

High-Speed 4:1 Analog Multiplexer

文件:1.306 Mbytes Page:9 Pages

NSC

国半

High-Speed 4:1 Analog Multiplexer

文件:1.306 Mbytes Page:9 Pages

NSC

国半

High-Speed 4:1 Analog Multiplexer

文件:1.306 Mbytes Page:9 Pages

NSC

国半

High-Speed 4:1 Analog Multiplexer

文件:1.306 Mbytes Page:9 Pages

NSC

国半

IRF533产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    79000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    80V

  • Maximum Continuous Drain Current:

    12A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-14 15:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
sgs
24+
N/A
6980
原装现货,可开13%税票
IR
05+
原厂原装
1751
只做全新原装真实现货供应
IR
22+
DIP-7
8000
原装正品支持实单
ST
24+
TO-220
10000
只做原装正品现货 欢迎来电查询15919825718
三星
22+
TOP-3P
20000
公司只做原装 品质保障
SAMSUNG/三星
23+
TO-3P
6000
专注配单,只做原装进口现货
IR
23+
TO-263
7000
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IOR
25+
ZIP7
3629
原装优势!房间现货!欢迎来电!
ST
23+
TO-220
10000
专做原装正品,假一罚百!

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