位置：首页 > IC中文资料第6639页 > IRF533
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF533 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
| Motorola 摩托罗拉 |   | |
IRF533 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s | STMICROELECTRONICS 意法半导体 | | |
IRF533 | N-CHANNEL POWER MOSFETS
| Samsung 三星 | | |
IRF533 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IRF533 | N-Channel Power MOSFETs Avalanche Energy Rated
| HARRIS | | |
IRF533 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件：187.75 Kbytes Page：3 Pages | STMICROELECTRONICS 意法半导体 | | |
IRF533 | isc N-Channel Mosfet Transistor 文件：45.27 Kbytes Page：2 Pages | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Power MOSFETs Avalanche Energy Rated
| HARRIS | | ||
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件：187.75 Kbytes Page：3 Pages | STMICROELECTRONICS 意法半导体 | | ||
(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns / 534: 10 Turns / 535: 5 Turns FEATURES • Bushing and servo mount designs available • Linearity ± 0.25 , down to 0.05 on request • Special resistance tolerances to 1 • Rear shaft extensions and support bearing • Metric shaft available • Dual gang configuration and concentric shafts • High torque, center tap, slipping c | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
(22.2 mm) Multi Turn Wirewound Potentiometer - 533: 3 Turns/534: 10 Turns/535: 5 Turns 文件：85.23 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
533 series 文件：255.7 Kbytes Page：4 Pages | MARL Marl International Ltd | | ||
7/8 (22.2 mm) Multiturn Wirewound 533: 3 Turns/534: 10 Turns/535: 5 Turns 文件：100.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
IRF533产品属性
- 类型
描述
- 型号
IRF533
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAM |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
SAMSUNG |
24+/25+ |
3300 |
原装正品现货库存价优 |
||||
三星 |
97+ |
TOP-3P |
115 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO220 |
4650 |
||||
ST |
24+ |
TO-220 |
10000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
IR |
23+ |
TO220 |
18689 |
||||
IOR |
24+ |
ZIP7 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
SAMSUNG/三星 |
23+ |
TO-3P |
6000 |
专注配单,只做原装进口现货 |
|||
IR |
22+ |
DIP-7 |
8000 |
原装正品支持实单 |
IRF533芯片相关品牌
IRF533规格书下载地址
IRF533参数引脚图相关
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IRF533数据表相关新闻
IRF540NPBF
全新原装现货 支持第三方机构验证
2022-10-19IRF5305PBF
原装进口代理
2022-10-19IRF540NPBF
www.jskj-ic.com
2021-9-10IRF5305SPBF
www.jskj-ic.com
2021-8-23IRF540N
IRF540N，当天发货0755-82732291全新原装现货或门市自取.
2020-10-29IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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