IR2233价格

参考价格:¥66.3617

型号:IR2233JPBF 品牌:INTERNATIONAL 备注:这里有IR2233多少钱,2025年最近7天走势,今日出价,今日竞价,IR2233批发/采购报价,IR2233行情走势销售排行榜,IR2233报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IR2233

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

IR2233

Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

IR2233

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

IR2233

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

IR2233

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com

Infineon

英飞凌

IR2233

Reference Design Kit: 3-Phase 460VAC 3HP Motor Drive

文件:97.18 Kbytes Page:9 Pages

IRF

IR2233

封装/外壳:28-DIP(0.600",15.24mm) 包装:管件 描述:IC GATE DRVR HALF-BRIDGE 28DIP 集成电路(IC) 栅极驱动器

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

IRF

封装/外壳:44-LCC(J形引线),32 引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HALF-BRIDGE 44PLCC 集成电路(IC) 栅极驱动器

Infineon

英飞凌

Indoor/Outdoor Stadium Cable, RG-11/U Triax, 14 AWG solid, CMR

Product Description RG-11/U Triax, 14 AWG solid .064 bare copper conductor, gas-injected foam HDPE insulation, bare copper double shields (95 and 80 coverage), PVC insulation between braids, water blocking tape, CPE jacket, CMR rated

BELDEN

百通

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards

General Description BD2232G and BD2233G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2232G and BD2233G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Fe

ROHM

罗姆

INTERCONNECT BATTERY HOLDERS

文件:355.08 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Snap Bushings

文件:106.76 Kbytes Page:1 Pages

HeycoHeyco.

海科

Ultra-power CMOS Dual Output Unipolar Hall Effect Switch

文件:1.19754 Mbytes Page:3 Pages

MAT

美斯特类比

IR2233产品属性

  • 类型

    描述

  • 型号

    IR2233

  • 功能描述

    IC DRIVER 3-PHASE BRIDGE 28-DIP

  • RoHS

  • 类别

    集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关

  • 系列

    -

  • 标准包装

    50

  • 系列

    -

  • 配置

    低端

  • 输入类型

    非反相

  • 延迟时间

    40ns 电流 -

  • 9A

  • 配置数

    1

  • 输出数

    1 高端电压 -

  • 最大(自引导启动)

    -

  • 电源电压

    4.5 V ~ 35 V

  • 工作温度

    -40°C ~ 125°C

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-263-6,D²Pak(5 引线+接片),TO-263BA

  • 供应商设备封装

    TO-263

  • 包装

    管件

更新时间:2025-8-9 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口
Infineon(英飞凌)
24+
SOP-28-300mil
6473
百分百原装正品,可原型号开票
IOR
24+
DIP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
25+
PLCC44
32360
INFINEON/英飞凌全新特价IR2233JTRPBF即刻询购立享优惠#长期有货
IR
22+
DIP28
8000
原装正品支持实单
IR
23+
29539
##公司主营品牌长期供应100%原装现货可含税提供技术
Internationa
25+
28-DIP0.60015.24mm
4258
原装正品 价格优势
IR
15+
原厂原装
2000
进口原装现货假一赔十
INFINEON
24+
PLCC32
5000
原厂授权代理 价格绝对优势
INFINEON/英飞凌
1740+
PLCC32
9
原装正品 可含税交易

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  • IR2233-3相桥驱动器

    特点 •浮动通道设计为引导操作 充分运作,以600 V或1200 V 耐瞬态电压负 dV / dt的免疫 •门极驱动电压范围从10V/12V至20V直流和 高达25V的瞬态 •所有通道欠压锁定 •过电流关闭关闭所有六名司机 •独立的3个半桥式驱动器 •匹配的所有通道传播延迟 •兼容2.5V的逻辑 •产出与投入的逐步淘汰 •也可用无铅 说

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    说明 在IR2302(S)的高电压,高转速功率MOSFET和IGBT驱动器的依赖高,低侧参考输出渠道。专有的HVIC和闩锁的CMOS技术,使免疫耐用单片建设。逻辑输入与标准CMOS或LSTTL输出,下降到3.3V逻辑兼容。输出驱动器具有高脉冲电流缓冲级,最低司机跨导。浮动通道可用于驱动高侧配置中的运行一个N沟道功率MOSFET或IGBT最多600伏。... 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从5至20V •欠压锁定

    2013-2-9