IR2233价格
参考价格:¥66.3617
型号:IR2233JPBF 品牌:INTERNATIONAL 备注:这里有IR2233多少钱,2026年最近7天走势,今日出价,今日竞价,IR2233批发/采购报价,IR2233行情走势销售排行榜,IR2233报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | INFINEON 英飞凌 | ||
IR2233 | 1200 V three-phase gate driver IC with over current protection, fault reporting, OPAMP, and shutdown 1200 V 三相驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流,采用 28 引脚 PDIP 封装,适用于 IGBT 和 MOSFET。也有 44 引脚 PLCC 和 28 引脚 SOIC WB 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +1200 V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围:10 V/12 V 至 20 V DC,瞬态电压高达 25 V。\n• 全通道欠压锁定\n• 过流关断会关闭所有六个驱动器\n• 独立的 3 个半桥驱动器\n• 全通道匹配传播延迟\n• 2.5 V 逻辑兼容\n• 输出与输入不同相\n\n优势:; | INFINEON 英飞凌 | ||
IR2233 | 封装/外壳:28-DIP(0.600",15.24mm) 包装:管件 描述:IC GATE DRVR HALF-BRIDGE 28DIP 集成电路(IC) 栅极驱动器 | INFINEON 英飞凌 | ||
IR2233 | Reference Design Kit: 3-Phase 460VAC 3HP Motor Drive 文件:97.18 Kbytes Page:9 Pages | IRF | ||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | INFINEON 英飞凌 | |||
1200 V three-phase gate driver IC with over current protection, fault reporting, OPAMP, and shutdown 1200 V 三相驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流,采用封装,适用于 IGBT 和 MOSFET。也有 28 引脚 PDIP 和 28 引脚 SOIC WB 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +1200 V\n• 完全运行时的电压高达 +600 V (IR2135)的选项\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围:10 V/12 V 至 20 V DC,瞬态电压高达 25 V。\n• 全通道欠压锁定\n• 过流关断会关闭所有六个驱动器\n• 独立的 3 个半桥驱动器\n• 全通道匹配传播延迟\n• 2.5 V 逻辑兼容\n• 输出与输入不同相\n\n优势:; | INFINEON 英飞凌 | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | INFINEON 英飞凌 | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
1200 V three-phase gate driver IC with over current protection, fault reporting, OPAMP, and shutdown 1200 V 三相驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流,采用 28 引脚 SOICWB 封装,适用于 IGBT 和 MOSFET。也有 28 引脚 PDIP 和44 引脚 PLCC封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +1200 V\n• 完全运行时的电压高达 +600 V (IR2135)的选项\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围:10 V/12 V 至 20 V DC,瞬态电压高达 25 V。\n• 全通道欠压锁定\n• 过流关断会关闭所有六个驱动器\n• 独立的 3 个半桥驱动器\n• 全通道匹配传播延迟\n• 2.5 V 逻辑兼容\n• 输出与输入不同相\n\n优势:; | INFINEON 英飞凌 | |||
Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
封装/外壳:44-LCC(J形引线),32 引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HALF-BRIDGE 44PLCC 集成电路(IC) 栅极驱动器 | INFINEON 英飞凌 | |||
2-INPUT SINGLE VIDEO SWITCH 文件:253.26 Kbytes Page:8 Pages | NJRC 日本无线 | |||
2-INPUT SINGLE VIDEO SWITCH 文件:253.26 Kbytes Page:8 Pages | NJRC 日本无线 | |||
2-INPUT SINGLE VIDEO SWITCH 文件:253.26 Kbytes Page:8 Pages | NJRC 日本无线 | |||
2-INPUT SINGLE VIDEO SWITCH 文件:253.26 Kbytes Page:8 Pages | NJRC 日本无线 | |||
2-INPUT SINGLE VIDEO SWITCH 文件:253.26 Kbytes Page:8 Pages | NJRC 日本无线 |
IR2233产品属性
- 类型
描述
- Product Status:
active and preferred
- Voltage Class:
1200 V
- Output Current Source min:
0.2 A
- Output Current Source:
0.25 A
- Output Current Sink min:
0.42 A
- Output Current Sink:
0.5 A
- Channels:
6
- Configuration:
Three Phase
- Qualification:
Industrial
- Isolation Type:
Functional levelshift
- Switch Type:
IGBT/MOSFET
- Package name:
PDIP28
- UVLO Input Off:
8.2 V
- UVLO Output Off:
8.2 V
- Turn On Propagation Delay max:
1000 ns
- Turn On Propagation Delay:
750 ns
- Turn On Propagation Delay min:
500 ns
- Turn Off Propagation Delay max:
950 ns
- Turn Off Propagation Delay:
700 ns
- Turn Off Propagation Delay min:
450 ns
- Input Vcc min:
10 V
- Input Vcc max:
20 V
- Output Vbs min:
10 V
- Output Vbs max:
20 V
- Rise Time max:
150 ns
- Rise Time:
90 ns
- Fall Time max:
70 ns
- Fall Time:
40 ns
- UVLO Input On:
8.6 V
- UVLO Output On:
8.6 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
PLCC |
3485 |
全新原装、公司现货热卖 |
|||
INFINEON |
23+ |
PLCC |
15690 |
正规渠道,只有原装! |
|||
IR |
22+ |
原厂封装 |
6315 |
原装正品,实单请联系 |
|||
Infineon(英飞凌) |
25+ |
PLCC-32(16.6x16.6) |
12421 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INFINEON/英飞凌 |
25+ |
PLCC44 |
32360 |
INFINEON/英飞凌全新特价IR2233JTRPBF即刻询购立享优惠#长期有货 |
|||
IOR |
25+ |
PLCC |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
IR |
15+ |
原厂原装 |
2000 |
进口原装现货假一赔十 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
1740+ |
PLCC32 |
9 |
原装正品 可含税交易 |
IR2233规格书下载地址
IR2233参数引脚图相关
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- IR2214SSTRPBF
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- IR22141
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- IR2213STRPBF
- IR2213SPBF
- IR2213PBF
- IR2213
- IR2184STRPBF
- IR2184SPBF
- IR2184S
- IR2184PBF
- IR21844STRPBF
- IR21844SPBF
- IR21844PBF
- IR21844
- IR2184
- IR2183STRPBF
- IR2183SPBF
- IR2183S
- IR2183PBF
- IR21834STRPBF-CUTTAPE
- IR21834STRPBF
- IR21834SPBF
- IR21834PBF
- IR21834
- IR2183
- IR2181STRPBF
- IR2181SPBF
- IR2181S
- IR21814
- IR2181
- IR2177S
- IR2175S
- IR2175
- IR2172S
- IR2172
- IR2171S
- IR2171
- IR2170S
IR2233数据表相关新闻
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2019-5-6IR2302-高端和低端驱动器
说明 在IR2302(S)的高电压,高转速功率MOSFET和IGBT驱动器的依赖高,低侧参考输出渠道。专有的HVIC和闩锁的CMOS技术,使免疫耐用单片建设。逻辑输入与标准CMOS或LSTTL输出,下降到3.3V逻辑兼容。输出驱动器具有高脉冲电流缓冲级,最低司机跨导。浮动通道可用于驱动高侧配置中的运行一个N沟道功率MOSFET或IGBT最多600伏。... 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从5至20V •欠压锁定
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2013-2-9
DdatasheetPDF页码索引
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