位置:首页 > IC中文资料第993页 > IR2233
IR2233价格
参考价格:¥66.3617
型号:IR2233JPBF 品牌:INTERNATIONAL 备注:这里有IR2233多少钱,2025年最近7天走势,今日出价,今日竞价,IR2233批发/采购报价,IR2233行情走势销售排行榜,IR2233报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | ||
IR2233 | 3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | Infineon 英飞凌 | ||
IR2233 | Reference Design Kit: 3-Phase 460VAC 3HP Motor Drive 文件:97.18 Kbytes Page:9 Pages | IRF | ||
IR2233 | 封装/外壳:28-DIP(0.600",15.24mm) 包装:管件 描述:IC GATE DRVR HALF-BRIDGE 28DIP 集成电路(IC) 栅极驱动器 | Infineon 英飞凌 | ||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | Infineon 英飞凌 | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com | Infineon 英飞凌 | |||
3-PHASE BRIDGE DRIVER Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | IRF | |||
封装/外壳:44-LCC(J形引线),32 引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HALF-BRIDGE 44PLCC 集成电路(IC) 栅极驱动器 | Infineon 英飞凌 | |||
Indoor/Outdoor Stadium Cable, RG-11/U Triax, 14 AWG solid, CMR Product Description RG-11/U Triax, 14 AWG solid .064 bare copper conductor, gas-injected foam HDPE insulation, bare copper double shields (95 and 80 coverage), PVC insulation between braids, water blocking tape, CPE jacket, CMR rated | BELDEN 百通 | |||
1ch Small Package High Side Switch ICs for USB Devices and Memory Cards General Description BD2232G and BD2233G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2232G and BD2233G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Fe | ROHM 罗姆 | |||
INTERCONNECT BATTERY HOLDERS 文件:355.08 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Snap Bushings 文件:106.76 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
Ultra-power CMOS Dual Output Unipolar Hall Effect Switch 文件:1.19754 Mbytes Page:3 Pages | MAT 美斯特类比 |
IR2233产品属性
- 类型
描述
- 型号
IR2233
- 功能描述
IC DRIVER 3-PHASE BRIDGE 28-DIP
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
低端
- 输入类型
非反相
- 延迟时间
40ns 电流 -
- 峰
9A
- 配置数
1
- 输出数
1 高端电压 -
- 最大(自引导启动)
-
- 电源电压
4.5 V ~ 35 V
- 工作温度
-40°C ~ 125°C
- 安装类型
表面贴装
- 封装/外壳
TO-263-6,D²Pak(5 引线+接片),TO-263BA
- 供应商设备封装
TO-263
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
Infineon(英飞凌) |
24+ |
SOP-28-300mil |
6473 |
百分百原装正品,可原型号开票 |
|||
IOR |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
PLCC44 |
32360 |
INFINEON/英飞凌全新特价IR2233JTRPBF即刻询购立享优惠#长期有货 |
|||
IR |
22+ |
DIP28 |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
29539 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
Internationa |
25+ |
28-DIP0.60015.24mm |
4258 |
原装正品 价格优势 |
|||
IR |
15+ |
原厂原装 |
2000 |
进口原装现货假一赔十 |
|||
INFINEON |
24+ |
PLCC32 |
5000 |
原厂授权代理 价格绝对优势 |
|||
INFINEON/英飞凌 |
1740+ |
PLCC32 |
9 |
原装正品 可含税交易 |
IR2233规格书下载地址
IR2233参数引脚图相关
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- IR2403
- IR2308SPBF
- IR2308S
- IR2308PBF
- IR2308
- IR2304STRPBF
- IR2304SPBF
- IR2304S
- IR2304PBF
- IR2304
- IR2302STRPBF
- IR2302SPBF
- IR2302S
- IR2302PBF
- IR2302
- IR2301SPBF
- IR2301S
- IR2301PBF
- IR2301
- IR2277SPBF
- IR2277S
- IR22771SPBF
- IR-225
- IR2238QPBF
- IR2238Q
- IR2237Q
- IR2237J
- IR2237
- IR2235SPBF
- IR2235S
- IR2235PBF
- IR2235JPBF
- IR2235J
- IR2235
- IR2233SPBF
- IR2233S
- IR2233PBF
- IR2233JTRPBF
- IR2233JPBF
- IR2233J
- IR2214SSTRPBF
- IR2214SSPBF
- IR22141
- IR2214
- IR2213STRPBF
- IR2213SPBF
- IR2213PBF
- IR2213
- IR2184STRPBF
- IR2184SPBF
- IR2184S
- IR2184PBF
- IR21844STRPBF
- IR21844SPBF
- IR21844PBF
- IR21844
- IR2184
- IR2183STRPBF
- IR2183SPBF
- IR2183S
- IR2183PBF
- IR21834STRPBF-CUTTAPE
- IR21834STRPBF
- IR21834SPBF
- IR21834PBF
- IR21834
- IR2183
- IR2181STRPBF
- IR2181SPBF
- IR2181S
- IR21814
- IR2181
- IR2177S
- IR2175S
- IR2175
- IR2172S
- IR2172
- IR2171S
- IR2171
- IR2170S
IR2233数据表相关新闻
IR2184STRPBF 栅极驱动器
IR2184STRPBF
2024-11-20IR2184STRPBF原厂原标,现货
IR2184STRPBF原厂原标,现货
2024-8-1IR2304STRPBF,IR3080MTRPBF,IR3037ATRPBF,IR2184STRPBF
IR2304STRPBF,IR3080MTRPBF,IR3037ATRPBF,IR2184STRPBF
2020-1-10IR2184PBF公司大量原装正品现货/随时可以发货!
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-6IR2233-3相桥驱动器
特点 •浮动通道设计为引导操作 充分运作,以600 V或1200 V 耐瞬态电压负 dV / dt的免疫 •门极驱动电压范围从10V/12V至20V直流和 高达25V的瞬态 •所有通道欠压锁定 •过电流关闭关闭所有六名司机 •独立的3个半桥式驱动器 •匹配的所有通道传播延迟 •兼容2.5V的逻辑 •产出与投入的逐步淘汰 •也可用无铅 说
2013-2-9IR2302-高端和低端驱动器
说明 在IR2302(S)的高电压,高转速功率MOSFET和IGBT驱动器的依赖高,低侧参考输出渠道。专有的HVIC和闩锁的CMOS技术,使免疫耐用单片建设。逻辑输入与标准CMOS或LSTTL输出,下降到3.3V逻辑兼容。输出驱动器具有高脉冲电流缓冲级,最低司机跨导。浮动通道可用于驱动高侧配置中的运行一个N沟道功率MOSFET或IGBT最多600伏。... 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从5至20V •欠压锁定
2013-2-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103