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IR21834SPBF价格
参考价格：￥10.9147
型号：IR21834SPBF 品牌：IR 备注：这里有IR21834SPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IR21834SPBF批发/采购报价，IR21834SPBF行情走势销售排行榜，IR21834SPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR21834SPBF | HALF-BRIDGE DRIVER Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o | IRF |   | |
IR21834SPBF | 封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 14SOIC 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | |
HALF-BRIDGE DRIVER Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o | IRF | | ||
HALF-BRIDGE DRIVER 文件：361.81 Kbytes Page：22 Pages | Infineon 英飞凌 | | ||
HALF-BRIDGE DRIVER Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o | IRF | | ||
HALF-BRIDGE DRIVER 文件：361.81 Kbytes Page：22 Pages | Infineon 英飞凌 | |
IR21834SPBF产品属性
- 类型
描述
- 型号
IR21834SPBF
- 功能描述
功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A
- RoHS
否
- 制造商
Micrel
- 产品
MOSFET Gate Drivers
- 类型
Low Cost High or Low Side MOSFET Driver
- 电源电压-最大
30 V
- 电源电压-最小
2.75 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
SOP14 |
32360 |
INFINEON/英飞凌全新特价IR21834SPBF即刻询购立享优惠#长期有货 |
|||
Infine |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Infineon/英飞凌 |
23+ |
SOIC14N |
12700 |
买原装认准中赛美 |
|||
IR |
23+ |
14-SOIC |
8238 |
||||
Infineon/英飞凌 |
24+ |
SOIC14N |
25000 |
原装正品,假一赔十! |
|||
IR |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
SOP-14 |
2500 |
||||
Infineon/英飞凌 |
21+ |
SOIC14N |
6820 |
只做原装,质量保证 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IOR |
22+ |
SOP-14 |
5000 |
只做原装,假一赔十 |
IR21834SPBF规格书下载地址
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说明 在IR2183（4）（S）的高电压，高速功率MOSFET和IGBT与司机相关的高，低侧参考输出通道。专有HVIC和闩锁免疫坚固耐用的CMOS技术使单片建设。该逻辑输入与标准兼容CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，最低司机跨导。浮动通道可用来驱动高侧配置中的一个N沟道功率MOSFET或IGBT它可在高达600伏。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠
2013-2-9
DdatasheetPDF页码索引
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