SELF-OSCILLATING HALF-BRIDGE DRIVER

Description The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscill

新设计，我们推荐 IRS2153D

自激振荡 600 V 半桥驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流，采用 8 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 欠压锁定\n• 可编程振荡器频率\n• 双通道的匹配传播延迟\n• 微电源启动电流为 125 A（典型值）\n• 高边输出与 RT 同相\n\n优势:;

SELF-OSCILLATING HALF-BRIDGE DRIVER

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SELF-OSCILLATING HALF-BRIDGE DRIVER

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封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8DIP 集成电路（IC） 栅极驱动器

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8DIP 集成电路（IC） 栅极驱动器

SELF-OSCILLATING HALF-BRIDGE DRIVER

文件：156.9 Kbytes Page：7 Pages

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

IC Voltage-Controlled Amplifiers

• Wide Dynamic Range: >116 dB • Wide Gain Range: >130 dB • Exponential (dB) Gain Control • Low Distortion: (0.008 @ 0 dB gain, 0.035 @15dB gain) • Wide Gain-Bandwidth: 6 MHz

3.3-V LDO AND DUAL SWITCH FOR USB BUS-POWERED HUB POWER MANAGEMENT

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