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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
500V CoolMOS짧 CE Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
600V CoolMOS??P6 Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET Metal Oxide Semiconductor Field Effect Transistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
600V CoolMOS E6 Power Transistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET Metal Oxide Semiconductor Field Effect Transistor Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevice | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSE6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffered | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 600VCoolMOS™P6PowerTransistor Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650V CoolMOS C6 Power Transistor Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650V CoolMOS C6 CFD Power Transistor 650VCoolMOSC6CFDAPowerTransistor Applications 650VCoolMOSCFDisespeciallysuitableforresonantswitchingPWM stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 650VCoolMOSCFDAPowerTransistor Applications 650VCoolMOSCFDAisdesignedforswitchingapplications. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
650V CoolMOS C6 Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 |  | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
Smart Pressure Transmitter for Standard Thread Mounting 文件：256.98 Kbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
Smart Pressure Transmitter for Flange Mounting 文件：305.71 Kbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
Smart Pressure Transmitter for Button-Seal Mounting 文件：281.29 Kbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.79484 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
600V CoolMOS??C6 Power Transistor 文件：1.21195 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.19525 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.19785 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-P2 Power-Transistor 文件：174.71 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.32174 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.43724 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.4384 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | | |
IPx6 Rated Surface Mount LED 文件：151.63 Kbytes Page：2 Pages | AVAGOAvago 安华高安华高科技 | | |
IPX产品属性
- 类型
描述
- 型号
IPX
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
650V CoolMOS C6 CFD Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
8800 |
公司只作原装正品 |
|||
INFINEON |
2018+ |
PG-TSDSON |
11256 |
只做进口原装正品!假一赔十! |
|||
Ashining(泽耀科技) |
21+ |
19cm |
4750 |
中国航天工业部战略合作伙伴行业领导者 |
|||
DO-214 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
XFMRS |
23+ |
原厂封装 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
6000 |
原装现货正品 |
|||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON |
22+23+ |
PG-TSDSON |
19834 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
6820 |
只做原装,质量保证 |
IPX芯片相关品牌
IPX规格书下载地址
IPX参数引脚图相关
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IPX数据表相关新闻
IPW65R080CFDA是一种MOSFET（金属氧化物半导体场效应晶体管）
IPW65R080CFDA适用于各种电子设备和电路设计
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进口代理
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IPZA65R029CFD7制造商：InfineonTechnologies
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IPW65R110CFDATO-247,功率场效应管,MOSFET,AEC-Q101,N通道,650V,31.2A,0.099ohm,TO-247,通孔
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2020-11-24IQS228AS-00000000TSR
电容触摸传感器DYCALSensorwithInteligntHysteresis
2020-3-21
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