650V CoolMOS짧 CFD7 SJ Power Device

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650V CoolMOS ™ CFD7 超结 MOSFET 集成快速体二极管，采用 TO-247 封装，是谐振高功率拓扑的完美选择

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

650V CoolMOS짧 CFD7 SJ Power Device

文件：1.27198 Mbytes Page：14 Pages