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IPW60R280E6价格
参考价格：￥9.4595
型号：IPW60R280E6 品牌：Infineon 备注：这里有IPW60R280E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPW60R280E6批发/采购报价，IPW60R280E6行情走势销售排行榜，IPW60R280E6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R280E6 | 600V CoolMOS E6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 |   | |
IPW60R280E6 | N-Channel MOSFET Transistor 文件：338.85 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IPW60R280E6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.1053 Mbytes Page：17 Pages | Infineon 英飞凌 | | |
IPW60R280E6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
600V CoolMOS E6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor 文件：338.85 Kbytes Page：2 Pages | ISC 无锡固电 | |
IPW60R280E6产品属性
- 类型
描述
- 型号
IPW60R280E6
- 功能描述
MOSFET 600V CoolMOS E6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
25 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEO |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
1220+ |
TO-247 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
880000 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
7962 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
47186 |
郑重承诺只做原装进口现货 |
IPW60R280E6规格书下载地址
IPW60R280E6参数引脚图相关
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IPW60R280E6数据表相关新闻
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DdatasheetPDF页码索引
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