位置:首页 > IC中文资料第5161页 > IPW60R160P6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R160P6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤160mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | ||
IPW60R160P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.The offered devi | Infineon 英飞凌 | ||
IPW60R160P6 | Metal Oxide Semiconductor Field Effect Transistor 文件:3.13959 Mbytes Page:19 Pages | Infineon 英飞凌 | ||
IPW60R160P6 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | ||
Metal Oxide Semiconductor Field Effect Transistor 文件:3.13959 Mbytes Page:19 Pages | Infineon 英飞凌 | |||
N-Channel MOSFET Transistor • DESCRITION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.16Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev | ISC 无锡固电 | |||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤160mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.The offered devi | Infineon 英飞凌 | |||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISC 无锡固电 | |||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.The offered devi | Infineon 英飞凌 |
IPW60R160P6产品属性
- 类型
描述
- 型号
IPW60R160P6
- 制造商
Infineon Technologies AG
- 功能描述
COOL MOS - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON |
1713+ |
TO-247 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEO |
24+ |
TO-247 |
25000 |
一级专营品牌全新原装热卖 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon Technologies |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
T0-247 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
IPW60R160P6规格书下载地址
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DdatasheetPDF页码索引
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