IPW60R125CP价格

参考价格:¥21.3815

型号:IPW60R125CP 品牌:INFINEON 备注:这里有IPW60R125CP多少钱,2025年最近7天走势,今日出价,今日竞价,IPW60R125CP批发/采购报价,IPW60R125CP行情走势销售排行榜,IPW60R125CP报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPW60R125CP

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

Infineon

英飞凌

IPW60R125CP

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPW60R125CP

CoolMOS Power Transistor

文件:799.51 Kbytes Page:11 Pages

Infineon

英飞凌

IPW60R125CP

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

CoolMOS Power Transistor

文件:799.51 Kbytes Page:11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best RDS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topolog

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

CoolMos Power Transistor

文件:562.68 Kbytes Page:10 Pages

Infineon

英飞凌

IPW60R125CP产品属性

  • 类型

    描述

  • 型号

    IPW60R125CP

  • 功能描述

    MOSFET COOL MOS PWR TRANS MAX PWR 650V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-30 15:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!
Infineon/英飞凌
21+
PG-TO247-3
6820
只做原装,质量保证
INFINEO
24+
TO247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon(英飞凌)
24+
TO-247
7962
支持大陆交货,美金交易。原装现货库存。
INFINEON
1708+
TO-247
8500
只做原装进口,假一罚十
INFINEON
25+
TO-247
6000
原厂原装,价格优势
Infineon Technologies
23+
TO2473
9000
原装正品,支持实单
INFINEON/英飞凌
23+
TO-247
11220
英飞凌优势原装IC,高效BOM配单。
INFINEON/英飞凌
24+
TO247
110
只做原厂渠道 可追溯货源
Infineon/英飞凌
2025+
PG-TO247-3
8000

IPW60R125CP数据表相关新闻