IPW60R099价格

参考价格:¥22.4116

型号:IPW60R099C6 品牌:Infineon 备注:这里有IPW60R099多少钱,2025年最近7天走势,今日出价,今日竞价,IPW60R099批发/采购报价,IPW60R099行情走势销售排行榜,IPW60R099报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤99mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤99mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

Infineon

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

Infineon

英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 31A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.105Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

ISC

无锡固电

600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

Infineon

英飞凌

N-Channel MOSFET Transistor

文件:335.78 Kbytes Page:2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件:987.87 Kbytes Page:18 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.59508 Mbytes Page:15 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.59508 Mbytes Page:15 Pages

Infineon

英飞凌

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件:582.92 Kbytes Page:11 Pages

Infineon

英飞凌

Cool MOS Power Transistor Feature new revolutionary high voltage technology

文件:582.92 Kbytes Page:11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件:335.77 Kbytes Page:2 Pages

ISC

无锡固电

Increased MOSFET dv/dt ruggedness

文件:2.27598 Mbytes Page:18 Pages

Infineon

英飞凌

600V CoolMOS짧 P7 Power Transistor

文件:1.40696 Mbytes Page:14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件:335.53 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.099Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤99mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best Rds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

Infineon

英飞凌

IPW60R099产品属性

  • 类型

    描述

  • 型号

    IPW60R099

  • 功能描述

    MOSFET COOL MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-12 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEO
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
23+
TO-247
15000
全新原装现货,价格优势
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
Infineon
23+
PG-TO247-3
15500
英飞凌优势渠道全系列在售
INFINEON
21+
TO247
1574
INF
19+
TO-247
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon/英飞凌
24+
PG-TO247-3
25000
原装正品,假一赔十!
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
24+
TO-247
5000
只做原装正品现货 欢迎来电查询15919825718

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