位置：首页 > IC中文资料第11202页 > IPT040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High current density due to double mesa technology 文件：226.68 Kbytes Page：4 Pages | IPS |   | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.26 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.93 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.68 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.26 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.93 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.02 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.02 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.68 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.26 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.93 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.02 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.73 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.22 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.94 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.73 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.22 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.94 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.07 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.07 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.73 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：226.56 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：228.22 Kbytes Page：5 Pages | IPS | | ||
High current density due to double mesa technology 文件：230.94 Kbytes Page：4 Pages | IPS | | ||
High current density due to double mesa technology 文件：432.07 Kbytes Page：4 Pages | IPS | | ||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | | ||
RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS DESCRIPTION The SD4011 is a gold metallized NPN silicon bipolar device optimized for Class A operation in TV Band IV/V. Suitable for a variety of other UHF linear applications, SD4011 is supplied in an industry-standard .280 stud package. ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ COMMO | STMICROELECTRONICS 意法半导体 | | ||
HAS SERIES - 60 WATT 文件：177.19 Kbytes Page：3 Pages | POWER-ONE | | ||
HAS SERIES - 60 WATT 文件：177.19 Kbytes Page：3 Pages | POWER-ONE | | ||
HBD SERIES - DUAL OUTPUT, 60 WATT 文件：183.38 Kbytes Page：3 Pages | POWER-ONE | |
IPT040产品属性
- 类型
描述
- 型号
IPT040
- 功能描述
TRIAC|50V V(DRM)|40A I(T)RMS|PRESS-19
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
||||
Infineon |
25+ |
PG-HSOF-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
24+ |
PG-HSOF-8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
Infineon/英飞凌 |
25+ |
PG-HSOF-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON/英飞凌 |
2450+ |
HSOF-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Infineon |
24+ |
TO220-3 |
17900 |
MOSFET管 |
|||
INFINEON/英飞凌 |
22+ |
HSOF8 |
8000 |
原装正品,支持实单! |
|||
Infineon/英飞凌 |
21+ |
PG-HSOF-8 |
6820 |
只做原装,质量保证 |
IPT040规格书下载地址
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IPT040数据表相关新闻
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2019-7-9IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
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