位置：首页 > IC中文资料第9768页 > IPSH9N03LAG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPSH9N03LAG | OptiMOS짰2 Power-Transistor OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat | Infineon 英飞凌 |   | |
OptiMOS짰2 Power-Transistor OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat | Infineon 英飞凌 | |
IPSH9N03LAG产品属性
- 类型
描述
- 型号
IPSH9N03LAG
- 功能描述
MOSFET N-KANAL POWER MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
INFINEON |
24+ |
TO251-3 |
8866 |
||||
INFINEON |
23+ |
TO-251 |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
TO-251 |
7000 |
||||
INFINEON |
23+ |
TO-251 |
21585 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INFINEON/英飞凌 |
2022+ |
IPAKSL(T |
12888 |
原厂代理 终端免费提供样品 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
C.P.CLARE |
05+ |
原厂原装 |
24431 |
只做全新原装真实现货供应 |
|||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
INFINEON/英飞凌 |
22+ |
TO-251 |
92024 |
IPSH9N03LAG规格书下载地址
IPSH9N03LAG参数引脚图相关
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- ir2110
- IPX0AW
- IPX0AS
- IPX0AM
- IPX0AH
- IPT66
- IPT3115
- IPT2602
- IPT2601
- IPT0118
- IPT0002A33R-A
- IPT0001G33R-A
- IPT0001G33R
- IPT0001D33R-A
- IPT0001D33R
- IPT0001A33R-A
- ips面板
- IPS-ZX
- IPSY1A11
- IPS-XPS
- IPS-XLC
- IPSUAT
- IPSSAT
- IPSR-EMBEDDED
- IPSR-BASE
- IPSR-AXIBFM
- IP-SRAM/QDRII
- IPS-PS3
- IPSPLT
- IPS-PDFT
- IPS-M12
- IPSLUAT
- IPSLU
- IP-SLITE2
- IPSLAT
- IPSL3
- IPSL2
- IPSH9N03LAGXK
- IPSH6N03LB
- IPSH6N03LAGXK
- IPSH6N03LAG
- IPSH6N03LA G
- IPSH5N03LAGXK
- IPSH5N03LAG
- IPSH5N03LA G
- IPSH5N03LA
- IPSH4N03LAGXK
- IPSH4N03LA-G
- IPSH4N03LAG
- IPSH4N03LA G
- IPSH4N03LA
- IPS-FIVE
- IPSE.4.62SM600
- IPSE.4.33SM600
- IP-SDRAM/LPDDR2
- IP-SDRAM/HPDDR2
- IP-SDRAM/HPDDR
- IP-SDRAM/DDR3
- IPS-DDK
- IPSAT
- IPS7091
- IPS7081
- IPS6041
- IPS6031
- IPS6021
- IPS5751
- IPS5451
- IPS521S
- IPS521G
- IPS521
- IPS512G
- IPS511S
- IPS511G
- IPS511
- IPS401
- IPS2200
- IPS21
- IPS20
IPSH9N03LAG数据表相关新闻
IPS1025HFQ 高压侧开关
STMicroelectronics 采用 M0T5 VIPower 技术的单片架构采用了 QFN48L 封装
2022-10-27IPS1011SPBF
原装正品现货
2022-5-18IPW60R041P6原装现货
IPW60R041P6原装正品
2021-8-11IPW60R080P7
IPW60R080P7，全新原装当天发货或门市自取0755-82732291.
2019-9-20IPW60R060P7
IPW60R060P7
2019-7-9IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
