位置：首页 > IC中文资料第11022页 > IPP65R600E6
IPP65R600E6价格
参考价格：￥4.9335
型号：IPP65R600E6 品牌：Infineon 备注：这里有IPP65R600E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPP65R600E6批发/采购报价，IPP65R600E6行情走势销售排行榜，IPP65R600E6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP65R600E6 | 650V CoolMOS E6 Power Transistor Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin | Infineon 英飞凌 |   | |
IPP65R600E6 | N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | |
IPP65R600E6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
IPP65R600E6 | Metall Oxide Semiconductor Field Effect Transistor 文件：1.17442 Mbytes Page：18 Pages | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
650V CoolMOS E6 Power Transistor Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin | Infineon 英飞凌 | | ||
Metall Oxide Semiconductor Field Effect Transistor 文件：1.17442 Mbytes Page：18 Pages | Infineon 英飞凌 | |
IPP65R600E6产品属性
- 类型
描述
- 型号
IPP65R600E6
- 功能描述
MOSFET N-CH 700V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
24+ |
NA/ |
130 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INF |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INF |
1247+ |
TO-220 |
130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
inf进口原 |
25+23+ |
TO-220 |
22848 |
绝对原装正品全新进口深圳现货 |
|||
INFINE0N |
23+ |
TO-220-3 |
17000 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon |
17+ |
TO-220 |
6200 |
||||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INF |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
IPP65R600E6芯片相关品牌
IPP65R600E6规格书下载地址
IPP65R600E6参数引脚图相关
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- ir2110
- ips面板
- IPS1011
- IPS042G
- IPS041L
- IPS032G
- IPS031S
- IPS031R
- IPS031G
- IPS031
- IPS024G
- IPS022G
- IPS021S
- IPS021L
- IPS021
- IPS0151
- IPRI6
- IPRI4
- IPRI2
- IPRI0
- IPRH2
- IPRH0
- IPP80N08S2L-07
- IPP80N08S207
- IPP80N06S4L-05
- IPP80N06S2L11AKSA2
- IPP80N06S2L-11
- IPP80N06S2L07AKSA2
- IPP80N06S2L-07
- IPP80N06S2L-05
- IPP80N06S2-05
- IPP80N04S4-03
- IPP80N04S3-06
- IPP80N04S3-04
- IPP80N04S3-03
- IPP80N04S2L-03
- IPP80N03S4L-04
- IPP80N03S4L-03
- IPP77N06S2-12
- IPP70N10SL-16
- IPP70N10S3L-12
- IPP70N10S3-12
- IPP65R420CFD
- IPP65R420CF=FS1
- IPP65R380E6
- IPP65R310CFD
- IPP65R280E6
- IPP65R225C7XKSA1
- IPP65R190E6XKSA1
- IPP65R190CFD
- IPP65R190C6XKSA1
- IPP65R150CF=FS1
- IPP65R099C6XKSA1
- IPP65R095C7XKSA1
- IPP65R074C6XKSA1
- IPP65R045C7XKSA1
- IPP65R045C7
- IPP60R950C6
- IPP60R750E6
- IPP60R600P6
- IPP60R600E6XKSA1
- IPP60R600E6
- IPM6220
- IPM300
- IPM-22W
- IPM-19
- IPM-17
- IPM-15
- IPM-12
- IPM-10
- IPM-08
- IPM-057
- IPLA-32
- IPL88
- IPL86
- IPL85
- IPL84
- IPL78
- IPL76
- IPL68
- IPL66
- IPL65
IPP65R600E6数据表相关新闻
IPP65R190CFD
进口代理
2023-12-7IPQC60R010S7XTMA1
IPQC60R010S7XTMA1
2023-7-4IPS1011SPBF
原装正品现货
2022-5-18IPP65R110CFDA INFINEON/英飞凌 21+ TO-220
https://hfx03.114ic.com/
2022-2-19IPP65R600C6优势原装Infineon局道
IPP65R600C6 优势原装Infineon局道
2019-3-27IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
