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IPP65R150CFD

丝印代码:65F6150;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

INFINEON

英飞凌

IPP65R150CFD

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

INFINEON

英飞凌

IPP65R150CFD

N-Channel MOSFET Transistor

文件:338.54 Kbytes Page:2 Pages

ISC

无锡固电

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

INFINEON

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:2.19525 Mbytes Page:16 Pages

INFINEON

英飞凌

丝印代码:65F6150;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

INFINEON

英飞凌

丝印代码:65F6150;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

INFINEON

英飞凌

IPP65R150CFD产品属性

  • 类型

    描述

  • OPN:

    IPP65R150CFDXKSA1/IPP65R150CFDXKSA2

  • Qualification:

    Non-Automotive

  • Package name:

    PG-TO220-3/PG-TO220-3

  • VDS max:

    650 V

  • RDS (on) @10V max:

    150 mΩ

  • ID @25°C max:

    22.4 A

  • QG typ @10V:

    86 nC

  • Special Features:

    fast recovery diode

  • Polarity:

    N

  • Operating Temperature min:

    -55 °C

  • VGS(th) min:

    3.5 V

  • VGS(th) max:

    4.5 V

  • Technology:

    CoolMOS™ CFD2

更新时间:2026-5-21 15:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
TO2203
9000
原厂渠道,现货配单
INFINEON/英飞凌
2023+
TO-220
2749
十五年行业诚信经营,专注全新正品
Infineon/英飞凌
21+
PG-TO220-3
6820
只做原装,质量保证
INFINEO
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
25+
TO-220
10000
原装现货假一罚十
Infineon
23+
NA
6800
原装正品,力挺实单
Infineon/英飞凌
25+
PG-TO220-3
25000
原装正品,假一赔十!
Infineon(英飞凌)
25+
TO-220
21000
原装正品现货,原厂订货,可支持含税原型号开票。
Infineon(英飞凌)
25+
标准封装
8800
公司只做原装,详情请咨询

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