位置:首页 > IC中文资料 > IPI60R299CP

型号 功能描述 生产厂家 企业 LOGO 操作
IPI60R299CP

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard switching SMPS topologies

INFINEON

英飞凌

IPI60R299CP

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.299Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPI60R299CP

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

INFINEON

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is specially designed for:

INFINEON

英飞凌

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: Hard switching SMPS topologies

INFINEON

英飞凌

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

INFINEON

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: Hard switching SMPS topologies

INFINEON

英飞凌

IPI60R299CP产品属性

  • 类型

    描述

  • VDS max:

    600.0V

  • RDS (on) max:

    299.0mΩ

  • Polarity :

    N

  • ID  max:

    11.0A

  • Ptot max:

    96.0W

  • IDpuls max:

    34.0A

  • VGS(th) min max:

    2.5V 3.5V

  • QG :

    22.0nC 

  • Rth :

    1.3K/W 

  • RthJC max:

    1.3K/W

更新时间:2026-8-2 19:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
inf进口原
25+23+
TO-262
24139
绝对原装正品全新进口深圳现货
INFINEON
24+
PG-TO262
8866
INFINEON
23+
TO-262-3 Long Leads, I2Pak,
7000
INFINEON
09+
TO-262
16000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON/英飞凌
24+
TO262
8540
只做原装正品现货或订货假一赔十!
INFINEON
25+
TO262
28000
原装正品,可来电咨询
INFINEON/英飞凌
23+
TO262
11220
英飞凌优势原装IC,高效BOM配单。
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
Infineon
24+
NA
3000
进口原装正品优势供应

IPI60R299CP数据表相关新闻