600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 40mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

Infineon’s low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK package, ideal for low-frequency switching applications and solid-state solutions

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA

英飞凌最低的 RDS(on) * 采用新型顶部冷却 QDPAK 封装的 SJ MOSFET，非常适合低频开关汽车应用

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 40mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • TO220 package with total Pb-free die attach

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 40mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK bottom side cooling package is MSL1

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA