OptiMOS® 2 Power-Transistor

OptiMOS® 2 Power-Transistor • Ideal for high-frequency dc/dc converters\n• Qualified according to JEDEC1) for target application\n• N-channel, logic level\n• Excellent gate charge x RDS(on)product (FOM)\n• Superior thermal resistance\n• 175 °C operating temperature\n• Pb-free lead plating; RoHS compliant;

OptiMOS®2 Power-Transistor

OptiMOS®2 Power-Transistor • Ideal for high-frequency dc/dc converters\n• N-channel, logic level\n• Superior thermal resistance\n• Pb-free lead plating; RoHS compliant;

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual H

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the SOT223 surfa

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intende

TMOS POWER 6.0 AMPERES 30 VOLTS

文件：74.16 Kbytes Page：4 Pages